规格书 |
|
晶体管极性 |
N-Channel |
连续漏极电流 |
2 A |
RDS(ON) |
13 Ohms |
安装风格 |
Through Hole |
功率耗散 |
2.5 W |
封装/外壳 |
TO-247 |
漏源击穿电压 |
1.5 kV |
FET特点 |
Standard |
封装 |
Tube |
安装类型 |
Through Hole |
供应商设备封装 |
TO-3P-3, SC-65-3 |
开态Rds(最大)@ Id ,V GS |
13 Ohm @ 1A, 10V |
FET型 |
MOSFET N-Channel, Metal Oxide |
功率 - 最大 |
2.5W |
标准包装 |
30 |
漏极至源极电压(Vdss) |
1500V (1.5kV) |
电流 - 连续漏极(Id ) @ 25 °C |
2A (Ta) |
输入电容(Ciss ) @ VDS |
380pF @ 30V |
闸电荷(Qg ) @ VGS |
37.5nC @ 10V |
RoHS指令 |
Lead free / RoHS Compliant |
Vds - Drain-Source Breakdown Voltage |
1500 V |
工厂包装数量 |
30 |
系列 |
2SK3746 |
品牌 |
ON Semiconductor |
通道数 |
1 Channel |
Rds On - Drain-Source Resistance |
13 Ohms |
Pd - Power Dissipation |
2.5 W |
Id - Continuous Drain Current |
2 A |
晶体管类型 |
1 N-Channel |
技术 |
Si |
RoHS |
RoHS Compliant |